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| HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features * 10A, 400V and 500V * Latch Free Operation * Typical Fall Time < 1.4s * High Input Impedance * Low Conduction Loss * Anti-Parallel Diode * tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTP10N40F1D HGTP10N50F1D PACKAGE TO-220AB TO-220AB BRAND 10N40F1D 10N50F1D Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G E NOTE: When ordering, use the entire part number Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTP10N40F1D 400 400 12 10 12 20 16 10 75 0.6 -55 to +150 260 HGTP10N50F1D 500 500 12 10 12 20 16 10 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90 Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL NOTE: 1. TJ = +150oC, Min. RGE = 25 without latch. INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2751.2 3-25 Specifications HGTP10N40F1D, HGTP10N50F1D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS HGTP10N40F1D PARAMETERS Collector-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current Collector-Emitter On-Voltage SYMBOL BVCES VGE(TH) ICES IGES VCE(ON) TEST CONDITIONS IC = 1.25mA, VGE = 0V VGE = VCE, IC = 1mA TJ = +150oC, VCE = 400V TJ = +150oC, VCE = 500V VGE = 20V, VCE = 0V TJ = +150oC, IC = 5A, VGE = 10V TJ = +150oC, IC = 5A, VGE = 15V TJ = +25oC, IC = 5A, VGE = 10V TJ = +25oC, IC = 5A, VGE = 15V Gate-Emitter Plateau Voltage On-State Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Turn-Off Delay Time Fall Time Turn-Off Energy Loss Per Cycle (Off Switching Dissipation = WOFF x Frequency) Thermal Resistance Junction-toCase (IGBT) Thermal Resistance of Diode Diode Forward Voltage Diode Reverse Recovery Time VGEP QG(ON) tD(ON) tRI tD(OFF) tFI WOFF IC = 5A, VCE = 10V IC = 5A, VCE = 10V Resistive Load, IC = 5A, VCE = 400V, RL = 80, TJ = +150oC, VGE = 10V, RG = 25 MIN 400 2.0 MAX 4.5 1.25 100 2.5 2.2 2.5 2.2 5.3 (Typ) 13.4 (Typ) 45 (Typ) 35 (Typ) 130 (Typ) 1400 (Typ) 0.64 (Typ) HGTP10N50F1D MIN 500 2.0 MAX 4.5 1.25 100 2.5 2.2 2.5 2.2 UNITS V V mA mA nA V V V V V nC ns ns ns ns mJ tD(OFF)I tFI WOFF Inductive Load (See Figure 13), IC = 5A, VCE(CLP) = 400V, RL = 80, L = 50H, TJ = +150oC, VGE = 10V, RG = 25 - 375 1200 1.2 - 375 1200 1.2 ns ns mJ RJC RJC VEC tRR IEC = 10A IEC = 10A, dIEC/dt = 100A/s - 1.67 2.0 1.7 60 - 1.67 2.0 1.7 60 o C/W oC/W V ns Typical Performance Curves 12 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 10 PULSE TEST, VCE = 10V PULSE DURATION = 250s DUTY CYCLE < 2% TC = -55oC 10 VGE = 15V VGE = 10V VGE = 6.0V PULSE DURATION = 250s DUTY CYCLE < 0.5% TC = +25oC VGE = 5.5V VGE = 5.0V 4 VGE = 4.5V VGE = 4.0V 0 0 2 4 6 8 10 0 2 4 6 8 10 VGE , GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 8 8 6 6 4 TC = -55oC TC = +25oC TC = +150oC 2 2 0 FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS FIGURE 2. TYPICAL SATURATION CHARACTERISTICS 3-26 HGTP10N40F1D, HGTP10N50F1D Typical Performance Curves (Continued) 4 VCE(ON), SATURATION VOLTAGE (V) ICE, DC COLLECTOR CURRENT (A) TJ = +150 C 3 VGE = 10V o 18 16 14 12 10 8 6 4 2 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 +25 +50 +75 +100 +125 +150 TC , CASE TEMPERATURE (oC) VGE = 10V VGE = 15V 2 VGE = 15V 1 0 FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT (TYPICAL) 1000 f = 1MHz 800 C, CAPACITANCE (pF) FIGURE 4. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0.5 TJ +150oC, VCE = 400V L = 50H tD(OFF)I , TURN-OFF DELAY (s) 0.4 600 CISS 400 0.3 0.2 VGE = 15V, RG = 50 VGE = 10V, RG = 50 VGE = 15V, RG = 25 VGE = 10V, RG = 25 200 COSS 0 0 CRSS 5 10 15 20 25 0.1 0.0 1 ICE, COLLECTOR-EMITTER CURRENT (A) 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER VOLTAGE (TYPICAL) 2 TJ = +150oC, VGE = 10V RG = 25, L = 50H tFI, FALL TIME (s) FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) 10 WOFF , TURN-OFF SWITCHING LOSS (mJ) TJ = +150oC, VGE = 10V RG = 25, L = 50H VCE = 400V 1 VCE = 400V 1.0 VCE = 200V 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT (TYPICAL) FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL) 3-27 HGTP10N40F1D, HGTP10N50F1D Typical Performance Curves (Continued) fOP , MAXIMUM OPERATING FREQUENCY (KHz) 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) TJ = +150oC, TC = +100oC, VGE = 10V RG = 25, PT = 75W, L = 50H 500 GATEEMITTER VOLTAGE VCC = BVCES RL = 100 IG(REF) = 0.33mA VGE = 10V VCC = BVCES 10 VGE, GATE-EMITTER VOLTAGE (V) 100 VCE = 200V 375 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF VCE = 400V 10 250 5 0.75 BVCES 0.75 BVCES 125 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES COLLECTOR-EMITTER VOLTAGE 0 IG(REF) 20 IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0 1 1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR CURRENT AND VOLTAGE (TYPICAL) FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT 100 IEC , EMITTER-COLLECTOR CURRENT (A) TJ = +150oC 10 TJ = +100oC tRR, REVERSE RECOVERY TIME (ns) dIEC/dt 100A/s VR = 30V, TJ = +25oC 60 50 40 30 20 10 1.0 TJ = +25oC TJ = -50oC 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 12 14 16 VEC , EMITTER-COLLECTOR VOLTAGE (V) IEC , EMITTER-COLLECTOR CURRENT (A) FIGURE 11. TYPICAL FORWARD VOLTAGE FIGURE 12. TYPICAL REVERSE RECOVERY TIME Test Circuit RL L = 50H 1/RG = 1/RGEN + 1/RGE RGEN = 50 VCC 400V + - 20V 0V RGE = 50 FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT 3-28 HGTP10N40F1D, HGTP10N50F1D All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-29 |
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